A study of the i/p interface for flexible n-i-p a-Si:H thin film solar cells

作者：Wang, Jin; Tao, Ke^*; Cai, Hongkun; Zhang, Dexian; Li, Guofeng

来源：Materials Science in Semiconductor Processing, 2014, 25: 186-189.

DOI：10.1016/j.mssp.2013.11.024

• i/p Interface
• Simulation
• a-Si:H thin film solar cells
• Flexible substrate

In this paper, the influence of i/p interface buffer layer on the performance of flexible n-i-p a-Si:H thin film solar cells is studied. The results show that the dopant distribution in the buffer layer has large effect on the property of solar cells. A larger open circuit voltage and fill factor can be obtained when methane is introduced into the chamber prior to diborane during the deposition of buffer layer. The AMPS simulation indicates that it is beneficial to improve the built-in electric field in the i layer when the carbon is doped prior to boron, thus the carrier transport properties are improved. By further optimizing the deposition parameter, an initial conversion efficiency of 5.668% is achieved for the a-Si:H thin film solar cells on the PI substrates at 150 degrees C.

• 出版日期2014-9
• 单位南开大学