Non-volatile memory device using a polymer modified nanocrystal

作者：Kiazadeh A; Gomes H L^*; Rosa da Costa A M; Moreira J A; de Leeuw D M; Meskers S C J

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2011, 176(19): 1552-1555.

DOI：10.1016/j.mseb.2011.01.021

• Nanocrystals
• Resistive switching
• Non-volatile memories

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).

• 出版日期2011-11-25