摘要

In this paper, we focus on read operations in flash memory, which have received less attention than write operations. To reduce read latency, we propose a read-aware dynamic allocation mechanism for multichannel solid-state devices. The proposed mechanism enables read operations to be executed immediately by reserving the resources of channels, packages, and dies dedicated to read operations. This is done in collaboration with an internal device queue, in which write operations are freely routed to their proper addresses while maintaining the merits of a dynamic allocation mechanism. Our read-aware mechanism reduces read latency by avoiding read operation conflicts when trying to access resources already occupied by preissued write operations. The experimental results show that, with our proposed mechanism, read latency decreases by up to 32.5% with an increase of write latency of up to 6.8% in real traces while providing high compatibility with existing dynamic allocation schemes.

  • 出版日期2017-4