A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

作者：Guan Bao Lu; Ren Xiu Juan; Li Chuan; Li Shuo; Shi Guo Zhu; Guo Xia^*

来源：Chinese Physics B, 2011, 20(9): 094206.

DOI：10.1088/1674-1056/20/9/094206

• vertical-cavity surface-emitting laser
• strained quantum-well
• oxide confinement

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 mu m oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm(2). The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12 degrees C to 96 degrees C and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.

• 出版日期2011-9
• 单位北京工业大学