Ab initio analysis of electron-phonon coupling in molecular devices

作者：Sergueev N^*; Roubtsov D; Guo H

来源：Physical Review Letters, 2005, 95(14): 146803.

DOI：10.1103/PhysRevLett.95.146803

We report a first principles analysis of electron-phonon coupling in molecular devices under external bias voltage and during current flow. Our theory and computational framework are based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism. Using a molecular tunnel junction of a 1,4-benzenedithiolate molecule contacted by two aluminum leads as an example, we analyze which molecular vibrational modes are most relevant to charge transport under nonequilibrium conditions. We find that the low-lying modes are most important. As a function of bias voltage, the electron-phonon coupling strength can change drastically while the vibrational spectrum changes at a few percent level.

• 出版日期2005-9-30