An accurate high-speed single-electron quantum dot pump

作者：Giblin S P^*; Wright S J; Fletcher J D; Kataoka M; Pepper M; Janssen T J B M; Ritchie D A; Nicoll C A; Anderson D; Jones G A C

来源：New Journal of Physics, 2010, 12: 073013.

DOI：10.1088/1367-2630/12/7/073013

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.

• 出版日期2010-7-12