Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

作者：Zhou Fei; Chang Yao Feng^*; Wang Yanzhen; Chen Yen Ting; Xue Fei; Fowler Burt W; Lee Jack C

来源：Applied Physics Letters, 2014, 105(16): 163506.

DOI：10.1063/1.4900422

An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices with an exposed SiOx edge. Electrical test of encapsulated, edge-free devices in 1 atmosphere air indicates stable switching characteristics, unlike devices with an edge. This work demonstrates that SiOx RRAM is able to operate in air with proper encapsulation and an edge-free structure. The resistive switching failure mechanism when operating in air is explained by the oxidation of hydrogen-complexed defects in the switching filament.

• 出版日期2014-10-20