科研之友
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摘要
Different Miller-indices Si crystal planes covered with thermally grown SiO, layer were heat treated in CO containing ambient for several hours. Our group has been demonstrated that this process resulting nanometre sized SiC crystallites at the Si side of the Si/SiO2 interface. Low voltage scanning electron microscopy was used to obtain information about the microstructure of the system. Size, morphology and nucleation density of the SiC nanocrystals have been found to depend strongly on the orientation of the substrates. Comparing the (110) plane with the other crystal planes the typical grain size is smaller and the nucleation density is one order of magnitude higher.
- 出版日期2006-3
