Displacement-sensitive organic field effect transistor

作者：Karimov Kh S; Saleem M^*; Mahroof Tahir M; Qasuria T A; Khan Adam; Khan T A

来源：International Journal of Electronics, 2012, 99(1): 91-101.

DOI：10.1080/00207217.2011.609982

• organic field effect transistor
• copper phthalocyanine
• metal-semiconductor Schottky junction
• displacement sensor

Thin films of organic semiconductor copper phthalocynanine (CuPc) and Al were deposited in sequence by vacuum evaporation on a glass substrate with Ag source and drain electrodes. The effect of displacement on the properties of the fabricated field effect transistor with metal (aluminium)-semiconductor (copper phthalocyanine) Schottky junction was investigated. It was observed that the drain-source resistance of this organic field effect transistor was decreased with displacement.

• 出版日期2012