Detection of N and B in doped diamond films by ERDA method and related electrochemical characteristics

作者：Silva Leide Lili G^*; Trava Airoldi V J; Corat E J; Added N; Sumodjo P T A

来源：Diamond and Related Materials, 2007, 16(1): 174-180.

DOI：10.1016/j.diamond.2006.04.010

• hot filament CVD
• diamond film
• ERDA
• diamond electrodes

Boron and nitrogen incorporation in diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated by elastic recoil detection analysis (ERDA). Boron concentration of only B-doped films ranges from 0.3% to 1.7%, which is related to the increase of B concentration into the gas phase from 0.2% to 1.5%. Two different sets of diamond films co-doped with B and N were investigated. The B incorporation into the films varied from 0.17% to 0.29% while the B concentration in the gas phase is increased from 0.2% to 2.0% and the N concentration in the films remains fixed. If the N-2 concentration of gas phase increases from 0.7% to 4.8% at a fixed B concentration, the B/C ratio of the films remains virtually unchanged (0.1 to 0.17%). Our results obtained from Scanning Electron Microscope (SEM), Raman Spectroscopy and 4 points resistivity measurements demonstrated that nitrogen incorporation modifies the characteristics of B-doped diamond films. In this article we also discuss the effect of film doping on the diamond electrode working potential window, which has been extended from 3.0 V to 3.5-4.

• 出版日期2007-1