A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

作者：Yang Ching Yuan^*; Chang Chih Hsiang; Lin Jung Mao; Weng Jun Hong

来源：IEEE Microwave and Wireless Components Letters, 2011, 21(3): 163-165.

DOI：10.1109/LMWC.2010.2102011

• Back-gate MOS
• varied p-n junction capacitance
• varied transconductance
• voltage-controlled oscillator (VCO)

Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 mu m CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.

• 出版日期2011-3
• 单位中国科学院电工研究所