Differences between chloro-carbon and hydro-carbon precursors in low-temperature epitaxial growth of 4H-SiC

作者：Kotamraju Siva; Krishnan Bharat; Koshka Yaroslav^*

来源：Physica Status Solidi-Rapid Research Letters, 2010, 4(7): 145-147.

DOI：10.1002/pssr.201004110

• thin films
• structure and morphology
• CVD
• epitaxy
• semiconductors

The advantages of using the chlorinated carbon precursor chloromethane instead of the hydrocarbon precursor propane in low-temperature (1300 degrees C) epitaxial growth of 4H-SiC were investigated. Chloromethane was found to provide a much wider process window for variation Of the C/Si ratio between the lower boundary corresponding to the formation of condensed silicon face and the upper boundary corresponding to polytype inclusions and polycrystalline degradation, which is critical for achieving high growth rates without epilayer quality degradation. Use of a high Cl/Si ratio provided by HCl addition in the propane-based epitaxial growth did not eliminate the critical differences between chloro-carbon and hydro-carbon precursors.

• 出版日期2010-7