A Comparative Study of NBTI and RTN Amplitude Distributions in High-kappa Gate Dielectric pMOSFETs

作者：Chiu J P^*; Chung Y T; Wang Tahui; Chen Min Cheng; Lu C Y; Yu K F

来源：IEEE Electron Device Letters, 2012, 33(2): 176-178.

DOI：10.1109/LED.2011.2176912

• Amplitude
• negative bias temperature instability (NBTI)
• random telegraph noise (RTN)
• simulation

Random telegraph noise (RTN) and negative bias temperature (NBT) stress-induced threshold voltage (V-t) fluctuations in high-kappa gate dielectric and metal-gate pMOSFETs are investigated. We measured RTN amplitude distributions before and after NBT stress. RTN in poststressed devices exhibits a broader amplitude distribution than the prestress one. In addition, we trace a single trapped charge-induced Delta V-t in NBT stress and find that the average Delta V-t is significantly larger than a Delta V(t)caused by RTN. A 3-D atomistic simulation is performed to compare a single-charge-induced Delta V-t by RTN and NBTI. In our simulation, the probability distribution of a NBT trapped charge in the channel is calculated from the reaction-diffusion model. Our simulation confirms that the NBT-induced Delta V-t indeed has a larger distribution tail than RTN due to a current-path percolation effect.

• 出版日期2012-2