High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

作者：Nazir S^*; Kahaly M Upadhyay; Schwingenschloegl U

来源：Applied Physics Letters, 2012, 100(20): 201607.

DOI：10.1063/1.4719106

A theoretical study of the two-dimensional hole gas at the (AgO)(-)/(TiO2)(0) p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (similar to 4.9 angstrom) with a considerable carrier density of similar to 10(14)cm(-2). We estimate a hole mobility of 18.6 cm(2) V-1 s(-1), which is high enough to enable device applications.

• 出版日期2012-5-14