科研之友
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摘要
This paper proposed and optimized an IGBT subcircuit model which is fully spice compatible. Based on analytical equation describing the semiconductor device physics, the model parameters are extracted accurately via measured data without devices destruction. The IGBT n(-) layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor. The proposed model can be used to accurately predict the IGBT output I-V characteristics, and low current gain etc. The simulation results are verified by comparison with measurement results and found to be in good agreement. The average error is within 8% which is better than previously reported results of semi-mathematical models.
- 出版日期2002-12
- 单位西安交通大学
