摘要
Dual functional organic light emitting bistable memory devices (OLEBDs) were developed by using a Cs doped electron transport layer. Bistability was exhibited by Cs doping in 4,7-diphenyl-1,10-phenanthroline (Bphen) and the driving voltage was lowered by alkali metal doping. n-type doping effect of Cs with Bphen induced the electrical switching behavior in OLEBDs and a low driving voltage. A high on/off ratio over 1000 could be obtained in Cs doped OLEBDs and it was kept stable during multicycle measurements. OLEBDs showed superior performances both as a memory and a light emitting device.
- 出版日期2009-5-25