Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

作者：Fujikane Masaki^*; Yokogawa Toshiya; Nagao Shijo; Nowak Roman

来源：Applied Physics Letters, 2011, 99(22): 222106.

DOI：10.1063/1.3665250

• current density
• dielectric polarisation
• gallium compounds
• III-V semiconductors
• nanoindentation
• piezoelectricity
• Schottky barriers

We studied electrical characteristics in c-pane (0001) and m-plane (10-10) GaN by nanoindentation examination with a conductive diamond indenter. At constant voltage during partial indentation, the current density increased stepwise as the loading-unloading cycle went by in c-plane GaN and was constant in m-plane GaN. During several constant-indentation loads, the turn-on voltage decreased with increasing indentation load in c-plane GaN and was constant in m-plane GaN. We investigated the piezoelectric polarization anisotropy by in situ electric measurement while controlling strain in GaN crystals.

• 出版日期2011-11-28