Analysis of conduction mechanism in silicon nitride-based RRAM

作者：Jung Sunghun; Kim Sungjun; Oh Jeong Hoon; Ryoo Kyung Chang; Lee Jong Ho; Shin Hyungcheol; Park Byung Gook^*

来源：International Journal of Nanotechnology, 2014, 11(1-4): 167-177.

DOI：10.1504/IJNT.2014.059820

• RRAM
• conduction mechanism
• Si3N4
• metal-insulator-semiconductor (MIS) structure
• SCLC
• space charge limited conduction

The conduction mechanism in Ti/Si3N4/p-Si memory stack is described. In order to analyse the conduction mechanism, we have measured the I V characteristics in voltage sweep mode and performed I-V curve fitting. The temperature dependence in Ti/Si3N4/p-Si stacked cell has also been investigated because we cannot identify the conduction mechanism just based on the I-V curve fitting. From I-V curve fitting and temperature measurement data, we have found that space charge limited conduction (SCLC) model is the most probable mechanism in both high resistance state (HRS) and low resistance state (LRS).

• 出版日期2014