Application of neutron transmutation doping method to initially p-type silicon material

作者：Kim Myong Seop^*; Kang Ki Doo; Park Sang Jun

来源：Applied Radiation and Isotopes, 2009, 67(7-8): 1230-1233.

DOI：10.1016/j.apradiso.2009.02.019

• Neutron transmutation doping (NTD)
• p-Type silicon
• HANARO
• Neutron irradiation

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473 x 10(19) n Omega cm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

• 出版日期2009-8