摘要
We calculate the nondegenerate bound electronic nonlinear refractive index n2(ω-1$/;ω-2$/) (i.e., an index change at frequency ω-1$/ due to the presence of a beam at frequency ω-2$/) in semiconductors. We calculate this nonlinearity and its dispersion using a Kramers-Kronig transformation on the calculated nondegenerate nonlinear absorption spectrum due to two-photon absorption, electronic Raman and optical Stark effects. The calculated n2 values and their dispersion are compared to new experimental values for ZnSe and ZnS obtained using a 2-color Z-scan.
- 出版日期1994