Dual Threshold Voltage Organic Thin-Film Transistor Technology

作者：Nausieda Ivan^*; Ryu Kevin Kyungbum; Da He David; Akinwande Akintunde Ibitayo; Bulovic Vladimir; Sodini Charles G

来源：IEEE Transactions on Electron Devices, 2010, 57(11): 3027-3032.

DOI：10.1109/TED.2010.2072550

• Digital integrated circuits
• inverters
• organic compounds
• thin-film transistors (TFTs)

A fully photolithographic dual threshold voltage (V(T)) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The near-room-temperature (<= 95 degrees C) process produces integrated dual V(T) pentacene-based p-channel transistors. The two V(T)'s are enabled by using two gate metals of low (aluminum) and high (platinum) work function. The Al and Pt gate OTFTs exhibit nominally identical current-voltage transfer curves shifted by an amount Delta V(T). The availability of a high-V(T) device enables area-efficient zero-V(GS) high-output-resistance current sources, enabling high-gain inverters. We present positive noise margin inverters and rail-to-rail ring oscillators powered by a 3-V supply-one of the lowest supply voltages reported for OTFT circuits. These results show that integrating n- and p-channel organic devices is not mandatory to achieve functional area-efficient low-power organic integrated circuits.

• 出版日期2010-11