High-Performance Nonvolatile Organic Transistor Memory Using Quantum Dots-Based Floating Gate

作者：Hu, Daobing; Zhang, Guocheng; Yang, Huihuang; Zhang, Jun; Chen, Cihai; Lan, Shuqiong; Chen, Huipeng^*; Guo, Tailiang

来源：IEEE Transactions on Electron Devices, 2017, 64(9): 3816-3821.

DOI：10.1109/TED.2017.2724078

• Memory window
• nonvolatile floating-gate transistor memory
• quantum dots (QDs)
• trap carriers

A novel nonvolatile floating-gate transistor memory device using CdSe@ZnS quantum dots (QDs) embedded the insulating polymer as a charge-storage layer along with the rational design of device structure is presented. The core-shell structure CdSe@ZnS QDs can efficiently trap both holes and electrons under the applied writing/erasing operations, resulting in a considerable threshold voltage shifts (Delta V-TH) over 50 V and forming high-conductance (ON) and low-conductance (OFF) states at a gate voltage of 0 V. The value of threshold voltage shift is controlled by writing and erasing voltages, regardless with source-drain voltages. Furthermore, it exhibits a long retention time (the Delta V-TH can maintain 76% at 108 s) and outstanding endurance characteristics (> 500 cycles), demonstrating extraordinary stable and reliable memory property. Moreover, a thin layer of Al2O3 was introduced as tunneling dielectric layer which is essential for the high-performance floating-gate transistor memory device. The nonvolatile organic transistor memory devices using QDs-based floating gate show great potential application for high-performance organic memory devices.

• 出版日期2017-9
• 单位福州大学