A Quantitative Model for ELDRS and H-2 Degradation Effects in Irradiated Oxides Based on First Principles Calculations

作者:Rowsey Nicole L*; Law Mark E; Schrimpf Ronald D; Fleetwood Daniel M; Tuttle Blair R; Pantelides Sokrates T
来源:IEEE Transactions on Nuclear Science, 2011, 58(6): 2937-2944.
DOI:10.1109/TNS.2011.2169458

摘要

A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data over a wide range of dose rates and H-2 concentrations. Analysis of the degradation effects of individual defect types, the implementation of which has been informed by first principles calculations, provides insights into the mechanisms behind enhanced low-dose-rate effects in different hydrogen environments. The effects of initial defect concentration and location and the energetics of the defect-related reactions are explored. Conclusions are drawn about the roles of molecular hydrogen and hydrogenated defects in the radiation response of these devices.

  • 出版日期2011-12