摘要

Based on integral formula, discrete second electrical field is expressed as a sum of elementary contributions coming from charges accumulated on the surfaces of resistivity discontinuity. The electrical field of a positive unit point charge is introduced as space domain scanning (SDS) function, and charge occurrence probability (COP) is defined as the cross-correlation of the second electrical field with the SDS function. In order to analyze COP anomalies, COP function is normalized. To test the effectiveness of probability tomography of second electrical field, we use finite element algorithm to synthesize second electrical field for several models, and implement Multiple Superimposed tomography of probability. The results are quite satisfactory.