摘要
We investigated air gap-induced hybrid distributed Bragg reflectors (AH-DBRs) for use in high brightness and reliable AlGaInP-based light emitting diodes (LEDs). An air gap was inserted into the side of DBRs by selectively etching the AlxGa1-xAs DBR structures. With the AH-DBR structures, the optical output power of LEDs was enhanced by 15% compared to LEDs having conventional DBRs, due to the effective reflection of obliquely incident light by the air gap structures. In addition, the electrical characteristics showed that the AH-DBR LED is a desirable structure for reducing the leakage current, as it suppresses unwanted surface recombinations.
- 出版日期2015-7