科研之友
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摘要
We devised directionally controllable THz emission sources based on lateral composition modulation (LCM) structures. LCM structures were composed of In-rich Ga0.471n0.53P and Ga-rich Ga0.51 In049P layers whose period was in quantum scale of 15 nm. The inherent type II band alignment in these structures leads to electron hole (e h) separation and plays a key role in generating laterally polarized dipole ensembles, thus concomitantly emitting enhanced transmissive THz waves as compared to bulk sample. On the other hand, in lateral geometry, changes in THz fields between LCM and bulk structures turned out to negligible since the vertical electronic diffusion was allowed in both samples.
- 出版日期2015-7
