An ultra-high-speed direct digital frequency synthesizer implemented in GaAs HBT technology

作者：Chen Gaopeng^*; Wu Danyu; Jin Zhi; Liu Xinyu

来源：Chinese Journal of Semiconductors, 2010, 31(6).

DOI：10.1088/1674-4926/31/6/065002

• Dc power
• DC supplies
• Direct digital frequency synthesizer
• Direct digital synthesizer
• GaAs HBT
• High-speed
• Microwave monolithic integrated circuits
• Nyquist band
• Output frequency
• Spurious free dynamic range
• Ultra high speed
• Utilization ratios

This paper presents a 10-GHz 8-bit direct digital synthesizer (DDS) microwave monolithic integrated circuit implemented in 1 μm GaAs HBT technology. The DDS takes a double-edge-trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture, which can maximize the utilization ratio of the GaAs HBT's high-speed potential. With an output frequency up to 5 GHz, the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band, and consumes 2.4 W of DC power from a single -4.6 V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4 × 2.0 mm2.

• 出版日期2010