A multi-band low noise amplifier with strong immunity to interferers

作者:Zahir Zaira*; Banerjee Gaurab; Zeidan Mohamad A; Abraham Jacob A
来源:Analog Integrated Circuits and Signal Processing, 2017, 93(1): 13-27.
DOI:10.1007/s10470-017-1020-5

摘要

A multi-band low noise amplifier (LNA) is designed to operate over a wide range of frequencies (with center frequencies at 1.2, 1.7 and 2.2 GHz respectively) using an area efficient switchable pi network. The LNA can be tuned to different gain and linearity combinations for different band settings. Depending upon the location of the interferers, a specific band can be selected to provide optimum gain and the best signal-to-intermodulation ratio. This is accomplished by the use of an on-chip built-in-self-test circuit. The maximum power gain of the amplifier is 19 dB with a return loss better than 10 dB for 7 mW of power consumption. The noise figure is 3.2 dB at 1 GHz and its third-order intercept point (IIP3) ranges from -15 to 0 dBm. Implemented in a 0.13 mu m CMOS technology, the LNA occupies an active area of about 0.29 mm. This design can be used for cognitive radio and other wideband applications, which require a dynamic configuration of the signal-to-intermodulation ratio, when sufficient information about the power and the location of the interferers is not available.

  • 出版日期2017-10