A 3-phase AC-AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

作者：Nagai Shuichi^*; Yamada Yasuhiro; Negoro Noboru; Handa Hiroyuki; Hiraiwa Miori; Otsuka Nobuyuki; Ueda Daisuke

来源：IEEE Journal of the Electron Devices Society, 2015, 3(1): 7-14.

DOI：10.1109/JEDS.2014.2364307

• Gallium nitride
• driver circuits
• power integrated circuits
• power semiconductor switches
• matrix power converter
• microwave circuits.

This paper describes an ultracompact GaN 3 x 3 matrix power converter with drive-by-microwave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate injection transistor (GIT) bidirectional power switches integration chip with co-integrated RF rectifiers, novel isolated dividing couplers in a printed circuit board to reduce complicated gate lines, and low-consumption GaN/Si DBM gate driver on a chip that controls nine bi-directional power switches. The proposed 4.0-kW GaN 3x3 matrix power converter is extremely compact, measuring only 18 x 25 mm due to the use of GaN-GIT power device integration technology and DBM technology that provides isolated gate signals by microwave wireless power transmission and eliminates the need for photo-couplers and isolated power supplies. The GaN/Si DBM driver realizes low power consumption of only 2.0 W as a result of gate power sharing with three RF oscillators. The sequential switching operation by the fabricated GaN 3x3 matrix converter was successfully achieved.

• 出版日期2015-1