MOVPE growth of 1310 nm polarization-insensitive strained quantum-well semiconductor optical amplifiers

作者：Ma H^*; Zhu GX; Chen SH; Yi XJ

来源：Acta Physica Sinica, 2004, 53(12): 4257-4261.

• polarization-insensitive
• strained quantum-well
• semiconductor optical amplifier
• anti-reflection coating

The compressively-strained quantum wells, tensile-strained quantum wells and the combination of tensile-strained and compressively-strained quantum wells were grown by metal-organic vapor phase epitaxy, the materials properties were measured by photoluminescence spectra and x-ray double-crystal diffraction. A polarization-insensitive multiple-quantum-well optical amplifier for 1310 nm wavelength employing both compressively-strained wells and tensile-strained wells in active region is reported. The amplifier was fabricated to ridge waveguide structure with 71 tilted cavity, the two facets were coated with antireflection thin films. The amplifier exhibited an excellent polarization insensitivity (less than 0.6 dB) over the entire range of wavelength (1.28 - 1.34 mum) and a fiber to fiber gain of 21.5 dB at bias current of 200 mA.

• 出版日期2004-12
• 单位华中科技大学