Development of an alkali-metal-free bath for electroless deposition of Co-W-P capping layers for copper interconnections

作者：Dulal S M S I; Kim Tae Ho; Rhee Hyongmoo; Sung Joon Yong; Kim Chang Koo^*

来源：Journal of Alloys and Compounds, 2009, 467(1-2): 370-375.

DOI：10.1016/j.jallcom.2007.12.003

• Co-W-P thin films
• Capping layers
• Electroless deposition
• Microelectronic devices
• Microstructure

A bath containing alkali-metal-free chemicals was developed for electroless deposition of Co-W-P thin films on a copper substrate and an optimisation of bath compositions was made. Ammonium cobalt sulphate, ammonium tungstate and ammonium hypophosphite were used as the precursors of cobalt, tungsten and phosphorus, respectively. Dimethylamine borane and ammonium. citrate were used as reducing and complexing agents, respectively. It was found that the cobalt content, film thickness and grain size increased with increase in cobalt ion concentration in the bath. Tungsten in the films increased from 1 to 6 at.% when its concentration in the bath was increased from 0.001 to 0.009 M. A variation of phosphorus content from 2 to 12 at.% was made by increasing its concentration from 0.01 to 0.05 M. It was found that the deposition rate decreased with increasing citrate ion concentration. Amorphous films were obtained when the combined amount of phosphorus and tungsten exceeded 12 at.% in the films. The crystalline film had small spherical crystaltites with diameter less than 40 nm.

• 出版日期2009-1-7