Post growing annealing effect on the optical, electrical and structural properties of CdSe nanocrystals embedded in silica thin films

作者：Levichev S^*; Chahboun A; Rolo A G; Conde O; Gomes M J M

来源：Thin Solid Films, 2009, 517(7): 2538-2540.

DOI：10.1016/j.tsf.2008.11.063

• Cadmium selenide
• Nanocrystalline thin films
• rf-magnetron co-sputtering
• Photoluminescence
• Electrical properties

In this work post-growth annealing effect on CdSe/SiO2 thin films grown by rf-magnetron co-sputtering technique was investigated. Annealed samples were characterised by Raman scattering, grazing incidence X-ray diffraction and room temperature photoluminescence. The nanocrystals (NCs) size changed from 15 to 5 nm by varying the annealing temperature from 550 to 400 degrees C Evaporation of Se at high temperatures was invoked to explain this phenomenon. Fowler-Nordheim tunnelling mechanism was found to be responsible for carrier transport for samples with bigger CdSe NCs sizes, and which showed better photovoltaic properties.

• 出版日期2009-2-2