科研之友
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摘要
A concept is proposed in this article for increasing the self-resonant frequency (SRF) of an area-fixed embedded capacitor by adjusting its form factor. Lumped equivalent circuits are developed with element values extracted from finite-difference time domain-simulated per-unit-length line parameters and S-parameters. Using a one-port, single-layered, metal-insulator-metal capacitor as an example, both theoretical and experimental results indicate that capacitors with widths larger than lengths exhibit higher SRF. However, as the unavoidable input/output discontinuities place an upper limit on the maximum achievable increase in SRF, these capacitors should be taken into account when designing embedded capacitors for specific applications.
- 出版日期2012-3
