A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

作者：Riedel S; Polakowski P; Mueller J

来源：AIP Advances, 2016, 6(9): 095123.

DOI：10.1063/1.4964300

<jats:p>Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.</jats:p>

• 出版日期2016-9