Deep level defects in GaAs1-xBix/GaAs heterostructures

作者：Jiang Zenan; Beaton D A; Lewis R B; Basile A F; Tiedje T; Mooney P M^*

来源：Semiconductor Science and Technology, 2011, 26(5): 055020.

DOI：10.1088/0268-1242/26/5/055020

Deep level transient spectroscopy (DLTS) measurements were performed on p-i-n diodes having i-regions that include a GaAs1-xBix layer sandwiched between two GaAs layers, all grown at T < 400 degrees C. A GaAs1 Bi-x(x)/GaAs heterostructure with Bi fraction x = 4.7% grown at 285 degrees C was found to have several traps in concentrations of similar to 5 x 10(15) cm(-3). The location of the observed traps in the i-region is determined from simulations of the band diagrams of these devices at the bias conditions used for the DLTS measurements and confirmed by DLTS spectra taken at various filling voltages.

• 出版日期2011-5-11