Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

作者：Kamath A^*; Patil T; Adari R; Bhattacharya I; Ganguly S; Aldhaheri R W; Hussain M A; Saha Dipankar

来源：IEEE Electron Device Letters, 2012, 33(12): 1690-1692.

DOI：10.1109/LED.2012.2218272

• Back barrier
• GaN
• high electron mobility (HEMT)
• two-dimensional electron gas (2DEG)

We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate control particularly for the lower channel. However, the problem can be contained by using a suitable back barrier for the lower channel. The double-channel back-barrier devices show good current gain and power gain cutoff frequencies. These devices can be operated with excellent gain linearity up to a larger value for input power and frequency.

• 出版日期2012-12