A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS

作者：Sarkar Anirban^*; Floyd Brian A

来源：IEEE Transactions on Microwave Theory and Techniques, 2017, 65(2): 522-535.

DOI：10.1109/TMTT.2016.2636842

• Continuous mode
• fifth-generation (5G)
• harmonic matching network design
• millimeter-wave (mm-wave)
• power amplifier (PA)
• SiGe

The design methodology and measurement results of a millimeter-wave harmonic-tuned power amplifier (PA) are presented. The PA uses optimum fundamental and second-harmonic terminations to achieve high peak power-added efficiency (PAE). We present a parasitic-aware design technique for the output network realized as a bandpass filter cascaded with or surrounded by a low-pass matching network. This technique demonstrates a method of manipulating the second-harmonic phase of a Chebyshev bandpass filter, while maintaining a suitable impedance match at the fundamental. The technique is applied to a 28-GHz PA in SiGe BiCMOS, which achieves 15.3-dB gain, 18.6-dBm saturated output power, 15.5-dBm output 1-dB compression point, and 35.3% peak PAE. When backed off 6-from 1-dB compression, the PA achieves 11.5% PAE with a third-order intermodulation product of -33.7 dBc.

• 出版日期2017-2