Detection of Stress-Induced Interface Trap Generation on High-k Gated nMOSFETs in Real Time by Stress-and-Sense Charge Pumping Technique

作者：Lu Chun Chang^*; Chang Liao Kuei Shu; Tsai Fu Huan; Li Chen Chien; Wang Tien Ko

来源：IEEE Transactions on Electron Devices, 2015, 62(5): 1405-1410.

DOI：10.1109/TED.2015.2409477

• Charge pumping (CP)
• interface traps
• noninterruption measurement
• recovery

A stress-and-sense charge pumping (SSCP) technique is proposed in this paper to measure the stress-induced interface trap (Delta N-it) in real-time evolution without stress interruption. Results show that the Delta N-it measured by this SSCP technique is much higher than that measured by the conventional method. This difference is resulted from the recovery induced by stress interruption during the sensing measurements. The Delta N-it measured by SSCP method after interruption is approximately equal to that by the conventional one. The amount of recoverable Delta N-it is almost constant and independent of permanent damage. The stress-induced threshold voltage shift (Delta V-th) and Delta N-it under various stress frequencies and duty cycles are also measured. The Delta V-th seems to depend only on the total stress time of stress pulse. The Delta N-it measured by SSCP with different frequencies and duty cycles is similar. The Delta N-it also depends on the total stress time of stress pulse, but not the off time during the nonstress half cycle. In addition, it is found that the recovery induced by nonstress half cycle of ac stress is almost negligible as compared with that induced by stress interruption. Moreover, a two-stage phenomenon is observed on Delta N-it evolution. Results in this paper indicate that the stressing indeed induces trap generation in the first stage.

• 出版日期2015-5
• 单位清华大学