Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

作者：Ghoneim M T; Kutbee A; Nasseri F Ghodsi; Bersuker G; Hussain M M^*

来源：Applied Physics Letters, 2014, 104(23): 234104.

DOI：10.1063/1.4882647

We report the impact of mechanical anomaly on high-kappa/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

• 出版日期2014-6-9