A Development Summarization of the Power Semiconductor Devices II

作者：Duan, Baoxing^*; Yang, Yintang

来源：IETE TECHNICAL REVIEW, 2012, 29(1): 36-43.

DOI：10.4103/0256-4602.93130

• Breakdown voltage
• Charge shielding
• Electric field modulation
• Silicon-on-insulator LDMOS
• Specific on-resistance

For Silicon-on-Insulator (SOI) Lateral Double-diffused MOSFET (LDMOS), the new technologies, which apply the electric field modulation and charge shielding effects to design new kinds of SOI LDMOS, have been developed in this paper on the basis of several typical lateral high-voltage devices designed by the authors. The trade-off characteristic between the breakdown voltage and the on-resistance is improved further due to the optimized lateral and vertical electric field. Meanwhile, the merits and shortcomings of this new technology are pointed out compared with the conventional methods. This review is the second part for the development summarization of the power semiconductor devices.

• 出版日期2012-2
• 单位西安电子科技大学