Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

作者：Baek David J; Seol Myeong Lok; Choi Sung Jin; Moon Dong Il; Choi Yang Kyu^*

来源：Applied Physics Letters, 2012, 100(9): 093106.

DOI：10.1063/1.3690670

• elemental semiconductors
• graphene
• MOSFET
• nanoelectronics
• nanowires
• random-access storage
• silicon

Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a nanogap between the gate and the channel, GO was embedded after the complete device fabrication. By applying a proper gate voltage, charge trapping, and de-trapping within the GO was enabled and resulted in large threshold voltage shifts. The employment of GO with FinFET in our work suggests that graphitic materials can potentially play a significant role for future nanoelectronic applications.

• 出版日期2012-2-27