摘要
We investigate the properties of interfaces between highly spin-polarized zinc-blende (ZB) CrAs and GaAs using first-principles density functional calculations. It is found that the local spin polarization at the Fermi level is very high even at ZB-CrAs/GaAs interface and then exhibits gradual decay from the interface to the inside of GaAs, reflecting their ideal structural matching. We further study the properties of ZB-CrAs/GaAs multilayer where two-monolayer ZB-CrAs and two-monolayer GaAs stack alternately. The multilayer shows high spin polarization throughout its entire region. Since the spin polarization is found insensitive to Cr-Ga substitutional disorder, both ZB-CrAs and ZB-CrAs/GaAs multilayer may work as efficient filter for spin-polarized current injection into GaAs.
- 出版日期2004-6-1