Amorphous In-Sn-Zn-O Films Deposited on Polymer and Glass Substrates Using Co-Sputtering System

作者：Bang Joonho; Lee Dongyeop; Kim Sanghyun; Cheong Wooseok; Song Pungkeun^*

来源：Journal of Nanoelectronics and Optoelectronics, 2011, 6(3): 369-374.

DOI：10.1166/jno.2011.1187

• In-Sn-Zn-O
• PET
• Dynamic Bending Test
• Co-Sputtering

This study examined the effect of the Zn concentration on the electrical and mechanical properties of ITO films on glass and PET substrates. Amorphous In-Sn-Zn-O (ITZO) films were successfully prepared on glass and polyethylene terephthalate (PET) substrates at room temperature. Deposition was carried out by magnetron co-sputtering system using two cathodes equipped with ITO targets (doped with 5, 7, 10 wt% SnO2) and ZnO target as the In-Sn source and Zn source, respectively. The concentration of Zn in In-Sn-Zn-O films was controlled by adjusting the RF power supplied to the ZnO target while maintaining a constant DC power supply to the ITO target. It was confirmed that electrical properties, surface uniformity and mechanical durability were improved by the introduction of Zn atoms. The lowest resistivity (2.95 x 10(-4) Omega cm) was obtained for the ITZO films deposited on PET substrate using an ITO target doped with 7 wt% SnO2.

• 出版日期2011-8