科研之友
微信
新浪微博
Facebook
分享链接
摘要
The high stability of a low temperature (9 K) scanning tunneling microscope junction is used to precisely adjust the enhancement of an external pulsed vacuum ultraviolet (VUV) laser The ensuing VUV optical-field strength is mapped on an hydrogenated Si(100) surface by imprinting locally one-photon atomic scale hydrogen desorption Subsequent to irradiation, topography of the Si(100) H surface at the reacted area revealed a desorption spot with unprecedented atomic precision Our results show that the shapes. positions. and sizes of the desorption spots are correlated to the calculated optical-field structure, offering real control of the optical-held distribution at molecular scale
- 出版日期2010-10
