An ultra-wide-band 0.4-10-GHz LNA in 0.18-mu m CMOS

作者：Chen Ke Hou^*; Lu Jian Hao; Chen Bo Jiun; Liu Shen Iuan

来源：IEEE Transactions on Circuits and Systems II-Express Briefs, 2007, 54(3): 217-221.

DOI：10.1109/TCSII.2006.886880

• common-gate configuration
• ultra-wide-band (UWB)
• CMOS low-noise amplifier (LNA)

A two-stage ultra-wide-band CMOS low-noise amplifier (LNA). is presented. With the common-gate configuration employed as the input stage, the broad-band input matching is obtained and the noise does not rise rapidly at higher frequency. By combining the common-gate and common-source stages, the broad-band characteristic and small area are achieved by using two inductors. This LNA has been fabricated in a 0.18-mu m CMOS process. The measured power gain is 11.2-12.4 dB and noise figure is 4.4-6.5 dB with -3-dB bandwidth of 0.4-10 GHz. The measured HP3 is - 6 dBm at 6 GHz. It consumes 12 mW from a 1.8-V supply voltage and occupies only 0.42 mm(2).

• 出版日期2007-3
• 单位中国科学院电工研究所