An innovating technological approach for Si-SiGe superlattice integration into thermoelectric modules

作者：Savelli G^*; Plissonnier M; Remondiere V; Bablet J; Fournier J M

来源：Journal of Micromechanics and Microengineering, 2008, 18(10): 104002.

DOI：10.1088/0960-1317/18/10/104002

This paper presents the development of doped polycrystalline Si- SiGe superlattices as thermoelectric (TE) elements integrated into generators. The modules dimension is 1 cm2, Si and SiGe are in situ doped (n and p types) and realized by CVD ( chemical vapor deposition) on a 4 inch (0 0 1) silicon wafer. Si-SiGe superlattice growth will be studied, as well as the integration into thermoelectric modules. Interest in using superlattices as TE materials will be justified by their thermal conductivity measurements. Moreover, process fabrication and different geometry designs will be presented. Finally, the first measurements realized on these modules allowed scavenging 320 mV for a temperature difference of 90 K.

• 出版日期2008-10
• 单位中国地震局