Analysis of the Degradation of MOSFETs in Switching Mode Power Supply by Characterizing Source Oscillator Signals

作者：Zheng, Xueyan; Wu, Lifeng^*; Guan, Yong; Li, Xiaojuan

来源：Mathematical Problems in Engineering, 2013, 2013: 302563.

DOI：10.1155/2013/302563

SwitchingMode Power Supply (SMPS) has been widely applied in aeronautics, nuclear power, high-speed railways, and other areas related to national strategy and security. The degradation of MOSFET occupies a dominant position in the key factors affecting the reliability of SMPS. MOSFETs are used as low-voltage switches to regulate the DC voltage in SMPS. The studies have shown that die-attach degradation leads to an increase in on-state resistance due to its dependence on junction temperature. On-state resistance is the key indicator of the health of MOSFETs. In this paper, an online real-time method is presented for predicting the degradation of MOSFETs. First, the relationship between an oscillator signal of source and on-state resistance is introduced. Because oscillator signals change when they age, a feature is proposed to capture these changes and use them as indicators of the state of health of MOSFETs. A platform for testing characterizations is then established to monitor oscillator signals of source. Changes in oscillator signal measurement were observed with aged on-state resistance as a result of die-attach degradation. The experimental results demonstrate that the method is efficient. This study will enable a method to predict the failure of MOSFETs to be developed.

• 出版日期2013
• 单位首都师范大学