Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

作者:Wang, Jiqing*; Shang, Deshuang; Mao, Huibing; Yu, Jianguo; Zhao, Qiang; Yang, Pingxiong; Xing, Huaizhong
来源:Solid State Communications, 2013, 156: 41-44.
DOI:10.1016/j.ssc.2012.11.023

摘要

We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

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