An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback

作者：Parvizi Mahdi^*; Allidina Karim; El Gamal Mourad N

来源：IEEE Transactions on Microwave Theory and Techniques, 2016, 64(6): 1843-1853.

DOI：10.1109/TMTT.2016.2562003

• Complementary current-reuse
• forward body bias
• inductorless
• low-noise amplifier (LNA)
• tunable active shunt-feedback
• ultra-low power (ULP)

This work presents and analyzes the design of a 1-V ultra-low power, compact, and wideband low-noise amplifier (LNA). The proposed LNA uses common-gate (CG) NMOS and PMOS transistors as input devices in a complementary current-reuse structure. Low power input matching is achieved by employing an active shunt-feedback architecture while the current of the feedback stage is also reused by the input transistor to improve the current efficiency of the LNA. A forward body biasing (FBB) scheme is exploited to tune the feedback coefficient. The complementary characteristics of the input stage leads to partial second-order distortion cancellation. The proposed inductorless LNA is implemented in an IBM 0.13-mu m 1P8M CMOS technology and occupies only 0.0052 mm(2). The measured LNA has a 12.3-dB gain 4.9-dB minimum noise figure (NF) input referred third-order intercept point (IIP3) of -10 dBm and 0.1-2.2-GHz bandwidth (BW), while consuming only 400 mu A from a 1-V supply.

• 出版日期2016-6