Dispersion engineered Ge11.5As24Se64.5 nanowires with a nonlinear parameter of 136W(-1)m(-1) at 1550nm

作者：Gai Xin^*; Madden Steve; Choi Duk Yong; Bulla Douglas; Luther Davies Barry

来源：Optics Express, 2010, 18(18): 18866-18874.

DOI：10.1364/OE.18.018866

We have fabricated 630 x 500nm nanowires from Ge11.5As24Se64.5 chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (gamma) was determined to be approximate to 136 +/- 7W(-1)m(-1) at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.

• 出版日期2010-8-30